IRFS3806TRLPBF

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Infineon Technologies

MOSFET, N-CH, 60V, 43A, TO-263-3

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Infineon Technologies

MOSFET, N-CH, 60V, 43A, TO-263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3806TRLPBF

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs	15.8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRFS3806TRLPBF	43 A	MOSFET (Metal Oxide)	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	71 W	D2PAK	Surface Mount	4 V	30 nC	N-Channel	15.8 mOhm	20 V	10 V	1150 pF
Infineon Technologies IRFS3806PBF	43 A	MOSFET (Metal Oxide)	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	71 W	D2PAK	Surface Mount	4 V	30 nC	N-Channel	15.8 mOhm	20 V	10 V	1150 pF

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