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ZXMN10A08E6QTA

ZXMN10A08E6QTA

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Diodes Inc

MOSFET BVDSS: 61V~100V SOT26 T&R

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ZXMN10A08E6QTA

ZXMN10A08E6QTA

Active
Diodes Inc

MOSFET BVDSS: 61V~100V SOT26 T&R

Find alt

Description

General part information

ZXMN10A08E6QTA

MOSFET BVDSS: 61V~100V SOT26 T&R

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN10A08E6QTA
Current - Continuous Drain (Id) (Ta)1.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)7.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)405 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-23-6
Package NameSOT-26
Power Dissipation (Max)1.1 W
QualificationAEC-Q101
Rds On (Max)250 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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