IPB020N08N5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 2 MOHM;

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IPB020N08N5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 2 MOHM;

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Description Specifications Series Pricing CAD Documents

Description

General part information

OptiMOS 5 Series

Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET IPB020N08N5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.

Technical Specifications

Parameters and characteristics for this part

Specification	IPB020N08N5ATMA1

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	166 nC
Input Capacitance (Ciss) (Max)	12100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	300 W
Rds On (Max)	2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.8 V

OptiMOS 5 Series

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Package Name	FET Type	Current - Continuous Drain (Id) (Tj)	Qualification	Grade	Channel Count	Configuration	Configuration - Features	Power - Max (Tc)	Current - Continuous Drain (Id) (Ta)
INFINEON IPB049N08N5ATMA1	125 W	80 V	20 V	MOSFET (Metal Oxide)	80 A	Surface Mount	4.9 mOhm 4.9 mOhm	3.8 V	3770 pF	53 nC	6 V	10 V	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PG-TO263-3	N-Channel
INFINEON BSZ070N08LS5ATMA1	69 W	80 V	20 V	MOSFET (Metal Oxide)	74 A	Surface Mount	7 mOhm	2.3 V	2340 pF	25 nC	4.5 V	10 V	-55 °C	150 °C	8-PowerTDFN	PG-TSDSON-8-FL	N-Channel
INFINEON IAUC120N06S5N022ATMA1	136 W	60 V	20 V	MOSFET (Metal Oxide)		Surface Mount	2.24 mOhm	3.4 V	4930 pF	68 nC	7 V	10 V	-55 °C	175 °C	8-PowerTDFN	PG-TDSON-8-34	N-Channel	170 A	AEC-Q101	Automotive
INFINEON IAUCN10S5L094DATMA1		100 V		MOSFET (Metal Oxide)		Surface Mount	9.4 mOhm	2.2 V	2180 pF	30 nC			-55 °C	175 °C	8-PowerTDFN	PG-TDSON-8-60		66 A	AEC-Q101	Automotive	2	N-Channel	Dual	96 W
INFINEON IQE046N08LM5CGSCATMA1	2.5 W 100 W	80 V	20 V	MOSFET (Metal Oxide)	99 A	Surface Mount	4.6 mOhm	2.3 V	3250 pF	38 nC	4.5 V	10 V	-55 °C	175 °C	9-PowerWDFN	PG-WHTFN-9	N-Channel								15.6 A
INFINEON IPP020N08N5AKSA1	375 W	80 V	20 V	MOSFET (Metal Oxide)	120 A	Through Hole	2 mOhm	3.8 V	16900 pF	223 nC	6 V	10 V	-55 °C	175 °C	TO-220-3	PG-TO220-3	N-Channel
INFINEON BSZ017NE2LS5IATMA1	2.1 W 50 W	25 V	16 V	MOSFET (Metal Oxide)		Surface Mount	1.7 mOhm	2 V	2000 pF	30 nC	4.5 V	10 V	-55 °C	150 °C	8-PowerTDFN	PG-TSDSON-8-FL	N-Channel								27 A
INFINEON BSC072N08NS5ATMA1	2.5 W 69 W	80 V	20 V	MOSFET (Metal Oxide)	74 A	Surface Mount	7.2 mOhm	3.8 V	2100 pF	29 nC	6 V	10 V	-55 °C	150 °C	8-PowerTDFN	PG-TDSON-8-7	N-Channel
INFINEON IAUC41N06S5N102ATMA1	42 W	60 V	20 V	MOSFET (Metal Oxide)		Surface Mount	10.2 mOhm	3.4 V	1112.1 pF	16.3 nC	7 V	10 V	-55 °C	175 °C	8-PowerTDFN	PG-TDSON-8-33	N-Channel	47 A	AEC-Q101	Automotive
INFINEON IAUZ40N06S5N050ATMA1	71 W	60 V	20 V	MOSFET (Metal Oxide)		Surface Mount	5 mOhm 5 mOhm	3.4 V	2200 pF	30.5 nC			-55 °C	175 °C	8-PowerTDFN	PG-TSDSON-8-33	N-Channel	40 A	AEC-Q101	Automotive