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BUH50G

BUH50G

Obsolete
ON Semiconductor

TRANS GP BJT NPN 500V 4A 50000MW 3-PIN(3+TAB) TO-220AB TUBE

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BUH50G

BUH50G

Obsolete
ON Semiconductor

TRANS GP BJT NPN 500V 4A 50000MW 3-PIN(3+TAB) TO-220AB TUBE

Find alt

Description

General part information

BUH50G

This NPN Bipolar Power Transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load.

Technical Specifications

Parameters and characteristics for this part

SpecificationBUH50G
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)5
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-220-3
Package NameTO-220
Power - Max50 VA
Transistor TypeNPN
Vce Saturation (Max)1 V, 1 V
Voltage - Collector Emitter Breakdown (Max)500 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part