Description
General part information
IAUC120N06S5L022ATMA1
Summary of features: The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing conduction and switching losses
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUC120N06S5L022ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 170 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 77 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 5651 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-34 |
| Power Dissipation (Max) | 136 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources