PJT7812_R1_00001
NRNDPanjit International Inc.
MOSFET 2N-CH 30V 0.5A SOT363
PJT7812_R1_00001
NRNDPanjit International Inc.
MOSFET 2N-CH 30V 0.5A SOT363
Description
General part information
PJT7812_R1_00001
MOSFET 2N-CH 30V 0.5A SOT363
Technical Specifications
Parameters and characteristics for this part
| Specification | PJT7812_R1_00001 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 500 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Max) | 0.87 nC |
| Input Capacitance (Ciss) (Max) | 34 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SOT-363 |
| Power - Max (Ta) | 350 mW |
| Rds On (Max) | 1.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.1 V |
Pricing
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CAD
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