DMC1030UFDBQ-13

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Diodes Inc

TRANSISTOR MOSFET ARRAY DUAL N-CHANNEL/P-CHANNEL 12V 6.6A/5A 6-PIN UDFN T/R

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Diodes Inc

TRANSISTOR MOSFET ARRAY DUAL N-CHANNEL/P-CHANNEL 12V 6.6A/5A 6-PIN UDFN T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMC1030UFDBQ-13

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs	23.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1003 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	1.36 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

NRND = Not Recommended for New Design

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Qualification	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Grade	Technology
Diodes Inc DMC1030UFDBQ-13	12 V	34 mOhm	U-DFN2020-6 (Type B)	1.36 W	5.1 A	6-UDFN Exposed Pad	Surface Mount	AEC-Q101	N and P-Channel Complementary	-55 °C	150 °C	1003 pF	23.1 nC	1 V	Automotive	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.