Description
General part information
AUIRFS4010TRL
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | AUIRFS4010TRL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 215 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 9575 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3 |
| Power Dissipation (Max) | 375 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.7 mOhm, 4.7 mOhm, 4.7 mOhm, 4.7 mOhm, 4.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
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