Specification	IRFHM8326TRPBFXTMA1

Current - Continuous Drain (Id) (Ta)	19 A
Current - Continuous Drain (Id) (Tc)	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	2496 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-WDFN Exposed Pad
Package Length	3.1 mm
Package Name	8-PQFN
Package Width	3.1 mm
Power Dissipation (Max)	37 W, 2.8 W
Rds On (Max)	4.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources