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Description

General part information

R8008ANX

MOSFET N-CH 800V 8A TO220FM

Technical Specifications

Parameters and characteristics for this part

SpecificationR8008ANX
Current - Continuous Drain (Id) (Ta)8 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)39 nC
Input Capacitance (Ciss) (Max)1080 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FM
Power Dissipation (Max)50 W
Rds On (Max)1.03 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

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