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G06N06S

G06N06S

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Goford Semiconductor

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

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G06N06S

G06N06S

Active
Goford Semiconductor

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Find alt

Description

General part information

G06N06S

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Technical Specifications

Parameters and characteristics for this part

SpecificationG06N06S
Current - Continuous Drain (Id) (Tc)8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)46 nC
Input Capacitance (Ciss) (Max)2477 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOP, 8-SOIC
Package Width3.9 mm
Power Dissipation (Max)2.1 W
Rds On (Max)22 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

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CAD

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Documents

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