
G2N65K
ActiveGoford Semiconductor
MOSFET N-CH 650V 2A 35W TO-252

G2N65K
ActiveGoford Semiconductor
MOSFET N-CH 650V 2A 35W TO-252
Description
General part information
G2N65K
MOSFET N-CH 650V 2A 35W TO-252
Technical Specifications
Parameters and characteristics for this part
| Specification | G2N65K |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 8 nC |
| Input Capacitance (Ciss) (Max) | 250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.2 V |
Pricing
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CAD
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