Specification	SQ4850EY-T1_BE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1250 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	6.8 W
Qualification	AEC-Q101
Rds On (Max)	22 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQ Series

Part	Vgs(th) (Max)	Qualification	FET Type	Package / Case	Technology	Mounting Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Grade	Rds On (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)
Vishay Dale SQ7414AEN-T1_BE3	2.5 V	AEC-Q101	N-Channel	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	24 nC 24 nC	16 A	PowerPAK® 1212-8	980 pF	-55 °C	175 °C	60 V	Automotive	26 mOhm	20 V	10 V	4.5 V	62 W
Vishay Dale SQ7414AENW-T1_GE3	2.5 V	AEC-Q101	N-Channel	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	25 nC	18 A	PowerPAK® 1212-8	1590 pF	-55 °C	175 °C	60 V	Automotive	23 mOhm	20 V	10 V	4.5 V	62 W
Vishay Dale SQ7414AEN-T1_GE3	2.5 V	AEC-Q101	N-Channel	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	24 nC 24 nC	16 A	PowerPAK® 1212-8	980 pF	-55 °C	175 °C	60 V	Automotive	26 mOhm	20 V	10 V	4.5 V	62 W

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