HGTA32N60E2
ActiveON Semiconductor
32A, 600V N-CHANNEL IGBT
HGTA32N60E2
ActiveON Semiconductor
32A, 600V N-CHANNEL IGBT
Description
General part information
HGTA32N60E2
IGBT 600 V 50 A 208 W Through Hole TO-218-5
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTA32N60E2 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 265 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-218-5 |
| Package Name | TO-218-5 |
| Power - Max | 208 W |
| Vce(on) (Max) | 2.9 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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