ZXMP10A17E6TA
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17E6TA
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
ZXMP10A17E6TA
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMP10A17E6TA |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 6.1 nC |
| Input Capacitance (Ciss) (Max) | 424 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-23-6 |
| Package Name | SOT-26 |
| Power Dissipation (Max) | 1.1 W |
| Rds On (Max) | 350 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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