V9N3M63-M3/I
ActiveVishay General Semiconductor - Diodes Division
9A, 60V DFN33A TMBS RECT
V9N3M63-M3/I
ActiveVishay General Semiconductor - Diodes Division
9A, 60V DFN33A TMBS RECT
Description
General part information
V9N3M63-M3/I
Diode 60 V 3A Surface Mount DFN33A
Technical Specifications
Parameters and characteristics for this part
| Specification | V9N3M63-M3/I |
|---|---|
| Capacitance | 1400 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage | 25 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | DFN33A |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Voltage - Forward (Vf) (Max) | 640 mV |
Pricing
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CAD
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Documents
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