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Description

General part information

RTQ040P02TR

MOSFET P-CH 20V 4A TSMT6

Technical Specifications

Parameters and characteristics for this part

SpecificationRTQ040P02TR
Current - Continuous Drain (Id) (Ta)4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)12.2 nC
Input Capacitance (Ciss) (Max)1350 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Package NameTSMT6 (SC-95)
Power Dissipation (Max)1.25 W
Rds On (Max)50 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)2 V

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CAD

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