
TSCDT08065G1
ActiveTaiwan Semiconductor Corporation
DIODE SCHOTTKY 650V 8A TO220AC

TSCDT08065G1
ActiveTaiwan Semiconductor Corporation
DIODE SCHOTTKY 650V 8A TO220AC
Description
General part information
TSCDT08065G1
DIODE SCHOTTKY 650V 8A TO220AC
Technical Specifications
Parameters and characteristics for this part
| Specification | TSCDT08065G1 |
|---|---|
| Capacitance | 39 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220AC |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky, Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.45 V, 1.45 V |
Pricing
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CAD
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Documents
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