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BSP603S2LNT

BSP603S2LNT

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INFINEON

N-CHANNEL POWER MOSFET

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BSP603S2LNT

BSP603S2LNT

Active
INFINEON

N-CHANNEL POWER MOSFET

Find alt

Description

General part information

BSP603S2LNT

N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationBSP603S2LNT
Current - Continuous Drain (Id) (Ta)5.2 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)42 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1390 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NamePG-SOT223-4-21
Power Dissipation (Max)1.8 W
QualificationAEC-Q101
Rds On (Max)33 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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