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XP10TN135K

XP10TN135K

Active
YAGEO

MOSFET N-CH 100V 3A SOT223

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XP10TN135K

XP10TN135K

Active
YAGEO

MOSFET N-CH 100V 3A SOT223

Find alt

Description

General part information

XP10TN135K

MOSFET N-CH 100V 3A SOT223

Technical Specifications

Parameters and characteristics for this part

SpecificationXP10TN135K
Current - Continuous Drain (Id) (Ta)3 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
Input Capacitance (Ciss) (Max)980 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Power Dissipation (Max)2.78 W
Rds On (Max)135 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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