Description
General part information
GS0650146LRTRXUMA1
The GS-065-014-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
Technical Specifications
Parameters and characteristics for this part
| Specification | GS0650146LRTRXUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 15.2 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.7 nC |
| Input Capacitance (Ciss) (Max) | 85 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 8-PDFN |
| Package Width | 8 mm |
| Rds On (Max) | 138 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 7 V |
| Vgs(th) (Max) | 2.6 V |
Pricing
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CAD
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