MJE802G
ObsoleteON Semiconductor
4.0 A, 80 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR
MJE802G
ObsoleteON Semiconductor
4.0 A, 80 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR
Description
General part information
MJE802G
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE802G |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 750 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126 |
| Power - Max | 40 W |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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CAD
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Documents
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