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Description

General part information

MCQ10N06Y-TP

MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationMCQ10N06Y-TP
Current - Continuous Drain (Id) (Ta)10 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)16.5 nC
Input Capacitance (Ciss) (Max)873 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOP, 8-SOIC
Package Width3.9 mm
Power Dissipation (Max)1.9 W
Rds On (Max)19 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

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CAD

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