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INFINEON BSR316PH6327XTSA1

BSR316PH6327XTSA1

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INFINEON

POWER MOSFET, P CHANNEL, 100 V, 360 MA, 1.3 OHM, SC-59, SURFACE MOUNT

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INFINEON BSR316PH6327XTSA1

BSR316PH6327XTSA1

Active
INFINEON

POWER MOSFET, P CHANNEL, 100 V, 360 MA, 1.3 OHM, SC-59, SURFACE MOUNT

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Description

General part information

BSR316PH6327XTSA1

Infineon technologies offers automotive and industrial manufacturers a broad portfolio ofN and P-Channel Small Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety ofapplicationsincludingLED lighting,ADAS,body control units,SMPSandmotor control.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSR316PH6327XTSA1
Current - Continuous Drain (Id) (Ta)360 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)165 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NamePG-SC59-3
Power Dissipation (Max)500 mW
QualificationAEC-Q101
Rds On (Max)1.8 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1 V

Pricing

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CAD

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