Specification	PMXB65ENE,147

Current - Continuous Drain (Id) (Ta)	3.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	295 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XDFN Exposed Pad
Package Name	DFN1010D-3
Power Dissipation (Max)	8.33 W, 400 mW
Rds On (Max)	0.067 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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