Specification	IMT44R025M2HXTMA2

Current - Continuous Drain (Id) (Ta)	9 A
Current - Continuous Drain (Id) (Tc)	68 A
Drain to Source Voltage (Vdss)	440 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	36 nC
Input Capacitance (Ciss) (Max)	1690 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerSFN
Package Name	PG-HSOF-8
Power Dissipation (Max)	3.8 W, 214 W
Rds On (Max)	32.1 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5.6 V

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