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STFI11N60M2-EP

STFI11N60M2-EP

Obsolete
STMicroelectronics

MOSFET N-CH 600V I2PAK-FP

Find alt
STFI11N60M2-EP

STFI11N60M2-EP

Obsolete
STMicroelectronics

MOSFET N-CH 600V I2PAK-FP

Find alt

Description

General part information

STFI11N60M2-EP

MOSFET N-CH 600V I2PAK-FP

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFI11N60M2-EP
Current - Continuous Drain (Id) (Tc)7.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12.4 nC
Input Capacitance (Ciss) (Max)390 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseI2PAK, TO-262-3 Full Pack
Package NameI2PAKFP (TO-281)
Power Dissipation (Max)25 W
Rds On (Max)595 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4.75 V

Pricing

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