BUJ303B,127

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WeEn Semiconductors

SOT78/SILICON DIFFUSED POWER TRANSISTOR

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WeEn Semiconductors

SOT78/SILICON DIFFUSED POWER TRANSISTOR

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General part information

Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB

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Parameters and characteristics commom to parts in this series

Specification	BUJ303B,127	BUJ303 Series

Current - Collector (Ic) (Max)	5 A	5 A
Current - Collector Cutoff (Max) [Max]	100 µA	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	23	10 - 28
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3	TO-220-3, SC-63, DPAK (2 Leads + Tab), TO-252-3, TO-220-3 Full Pack, Isolated Tab
Power - Max [Max]	100 W	32 - 100 W
Supplier Device Package	TO-220AB	TO-220AB, DPAK, TO-220F
Transistor Type	NPN	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V	1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V
Voltage - Collector Emitter Breakdown (Max)	-	500 V

TO220AB/HV LIGHTING TRANSISTOR

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Operating Temperature	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)
WeEn Semiconductors BUJ303A,127	14	Through Hole	TO-220-3	150 °C	5 A	500 V	TO-220AB	1.5 V	100 W	100 µA	NPN
WeEn Semiconductors BUJ303CD,118	28	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3	150 °C	5 A		DPAK	1.5 V	80 W	100 µA	NPN	400 V
WeEn Semiconductors BUJ303B,127	23	Through Hole	TO-220-3	150 °C	5 A		TO-220AB	1.5 V	100 W	100 µA	NPN	400 V
WeEn Semiconductors BUJ303AX,127	10	Through Hole	TO-220-3 Full Pack, Isolated Tab	150 °C	5 A	500 V	TO-220F	1.5 V	32 W	100 µA	NPN
WeEn Semiconductors BUJ303AD,118		Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3				DPAK