FDS5680
ObsoleteN-CHANNEL POWERTRENCH<SUP>TM</SUP> MOSFET, 60V, 8A, 20MΩ
FDS5680
ObsoleteN-CHANNEL POWERTRENCH<SUP>TM</SUP> MOSFET, 60V, 8A, 20MΩ
Description
General part information
FDS5680
This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDS5680 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 8 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 42 nC |
| Input Capacitance (Ciss) (Max) | 1850 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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