Technical Specifications
Parameters and characteristics for this part
| Specification | SUP50N03-5M1P-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 59.5 W, 2.7 W |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUP50N03-5M1P-GE3
N-Channel 30 V 50A (Tc) 2.7W (Ta), 59.5W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources