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GT025N06AD5

GT025N06AD5

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Goford Semiconductor

MOSFET N-CH 60V 170A DFN5*6-8L

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GT025N06AD5

GT025N06AD5

Active
Goford Semiconductor

MOSFET N-CH 60V 170A DFN5*6-8L

Find alt

Description

General part information

GT025N06AD5

MOSFET N-CH 60V 170A DFN5*6-8L

Technical Specifications

Parameters and characteristics for this part

SpecificationGT025N06AD5
Current - Continuous Drain (Id) (Tc)170 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)81 nC
Input Capacitance (Ciss) (Max)5044 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length4.9 mm
Package Name8-DFN
Package Width5.75 mm
Power Dissipation (Max)215 W, 104 W
Rds On (Max)2.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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