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IRFD220

IRFD220

Active
ON Semiconductor

0.8A 200V 0.800 OHM N-CHANNEL

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IRFD220

IRFD220

Active
ON Semiconductor

0.8A 200V 0.800 OHM N-CHANNEL

Find alt

Description

General part information

IRFD220

N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFD220
Current - Continuous Drain (Id) (Ta)800 mA
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)14 nC
Input Capacitance (Ciss) (Max)260 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.3 in
Package NameHVMDIP, 4-DIP, Hexdip
Package Width7.62 mm
Power Dissipation (Max)1 W
Rds On (Max)800 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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