Description
General part information
IGT65R055D2ATMA1
The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGT65R055D2ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 31 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 4.7 nC |
| Input Capacitance (Ciss) (Max) | 340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-3 |
| Power Dissipation (Max) | 106 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources