Specification	SI6562CDQ-T1-BE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Ta)	5.7 A
Current - Continuous Drain (Id) (Ta) (2)	5.1 A
Current - Continuous Drain (Id) (Tc)	6.7 A
Current - Continuous Drain (Id) (Tc) (2)	6.1 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	850 pF, 1200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power - Max (Ta)	1.1 W, 1.2 W
Power - Max (Tc)	1.6 W, 1.7 W
Rds On (Max)	30 mOhm, 22 mOhm, 22 mOhm
Rds On (Max) (1)	22 mOhm
Rds On (Max) (2)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

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