
MURT30060R
ActiveGeneSiC Semiconductor
DIODE MODULE GP 600V 150A 3TOWER

MURT30060R
ActiveGeneSiC Semiconductor
DIODE MODULE GP 600V 150A 3TOWER
Description
General part information
MURT30060R
DIODE MODULE GP 600V 150A 3TOWER
Technical Specifications
Parameters and characteristics for this part
| Specification | MURT30060R |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 150 A |
| Current - Reverse Leakage | 25 µA |
| Diode Configuration | Common Anode |
| Diode Pair Count | 1 pair |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Three Tower |
| Package Name | Three Tower |
| Reverse Recovery Time (trr) | 200 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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CAD
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Documents
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