Zenode.ai Logo
MURT30060R

MURT30060R

Active
GeneSiC Semiconductor

DIODE MODULE GP 600V 150A 3TOWER

Find alt
MURT30060R

MURT30060R

Active
GeneSiC Semiconductor

DIODE MODULE GP 600V 150A 3TOWER

Find alt

Description

General part information

MURT30060R

DIODE MODULE GP 600V 150A 3TOWER

Technical Specifications

Parameters and characteristics for this part

SpecificationMURT30060R
Current - Average Rectified (Io) (per Diode)150 A
Current - Reverse Leakage25 µA
Diode ConfigurationCommon Anode
Diode Pair Count1 pair
Mounting TypeChassis Mount
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseThree Tower
Package NameThree Tower
Reverse Recovery Time (trr)200 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources