FDD6030L
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 30V, 12A, 14.5MΩ
FDD6030L
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 30V, 12A, 14.5MΩ
Description
General part information
FDD6030L
This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD6030L |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12 A |
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 28 nC |
| Input Capacitance (Ciss) (Max) | 1230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 (DPAK) |
| Power Dissipation (Max) | 3.2 W, 56 W |
| Rds On (Max) | 14.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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