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NSVT856MTWFTBG

NSVT856MTWFTBG

Active
ON Semiconductor

TRANSISTOR, PNP, 65V, 0.1A, XDFNW ROHS COMPLIANT: YES

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NSVT856MTWFTBG

NSVT856MTWFTBG

Active
ON Semiconductor

TRANSISTOR, PNP, 65V, 0.1A, XDFNW ROHS COMPLIANT: YES

Find alt

Description

General part information

NSVT856MTWFTBG

The NST856MTWFT is designed for general purpose amplifier applications. It is housed in an ultra−compact DFN1010−3 withwettable flanks, recommended for the automotive industry’s optical inspection methods. The transistor is ideal for low−power surface mount applications where board space and reliability are at a premium.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVT856MTWFTBG
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)15 nA
DC Current Gain (hFE) (Min)220
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / Case3-XFDFN
Package Length1 mm
Package Name3-XDFNW
Package Width1 mm
Power - Max650 mW
QualificationAEC-Q101
Transistor TypePNP
Vce Saturation (Max)900 mV
Voltage - Collector Emitter Breakdown (Max)65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part