PJD4NA60_R2_00001
ActivePanjit International Inc.
MOSFETS 600V N-CHANNEL MOSFET
PJD4NA60_R2_00001
ActivePanjit International Inc.
MOSFETS 600V N-CHANNEL MOSFET
Description
General part information
PJD4NA60_R2_00001
MOSFETS 600V N-CHANNEL MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | PJD4NA60_R2_00001 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.1 nC |
| Input Capacitance (Ciss) (Max) | 450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Rds On (Max) | 2.4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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