Description
General part information
AIMBG75R060M1HXTMA1
The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
Technical Specifications
Parameters and characteristics for this part
| Specification | AIMBG75R060M1HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 34 A |
| Current - Continuous Drain (Id) (Tj) | 34 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 779 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, PG-TO263-7 |
| Power Dissipation (Max) | 167 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 55 mOhm |
| Technology | SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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CAD
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