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FQB12N60CTM

FQB12N60CTM

Obsolete
ON Semiconductor

MOSFET N-CH 600V 12A D2PAK

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FQB12N60CTM

FQB12N60CTM

Obsolete
ON Semiconductor

MOSFET N-CH 600V 12A D2PAK

Find alt

Description

General part information

FQB12N60CTM

N-Channel 600 V 12A (Tc) 3.13W (Ta), 225W (Tc) Surface Mount TO-263 (D2PAK)

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB12N60CTM
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)63 nC
Input Capacitance (Ciss) (Max)2290 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)3.13 W, 225 W
Rds On (Max)650 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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