
RQ3P120BLFRATCB
ActiveRohm Semiconductor
NCH 100V 12A, HSMT8AG, POWER MOS

RQ3P120BLFRATCB
ActiveRohm Semiconductor
NCH 100V 12A, HSMT8AG, POWER MOS
Description
General part information
RQ3P120BLFRATCB
NCH 100V 12A, HSMT8AG, POWER MOS
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3P120BLFRATCB |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6.8 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 360 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.2 mm |
| Package Name | 8-HSMT |
| Package Width | 3 mm |
| Power Dissipation (Max) | 40 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 62 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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