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RQ3P120BLFRATCB

RQ3P120BLFRATCB

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Rohm Semiconductor

NCH 100V 12A, HSMT8AG, POWER MOS

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RQ3P120BLFRATCB

RQ3P120BLFRATCB

Active
Rohm Semiconductor

NCH 100V 12A, HSMT8AG, POWER MOS

Find alt

Description

General part information

RQ3P120BLFRATCB

NCH 100V 12A, HSMT8AG, POWER MOS

Technical Specifications

Parameters and characteristics for this part

SpecificationRQ3P120BLFRATCB
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)360 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Package Length3.2 mm
Package Name8-HSMT
Package Width3 mm
Power Dissipation (Max)40 W
QualificationAEC-Q101
Rds On (Max)62 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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