SI7252DP-T1-GE3
ActiveVishay Dale
MOSFET 2N-CH 100V 36.7A PPAK SO8
SI7252DP-T1-GE3
ActiveVishay Dale
MOSFET 2N-CH 100V 36.7A PPAK SO8
Description
General part information
SI7252DP-T1-GE3
MOSFET 2N-CH 100V 36.7A PPAK SO8
Technical Specifications
Parameters and characteristics for this part
| Specification | SI7252DP-T1-GE3 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 36.7 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 27 nC |
| Input Capacitance (Ciss) (Max) | 1170 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 Dual |
| Package Name | PowerPAK® SO-8 Dual |
| Power - Max | 46 W |
| Rds On (Max) | 18 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3.5 V |
Pricing
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