NDC7003P
ActiveDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -60V, -0.34A, 5Ω
NDC7003P
ActiveDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -60V, -0.34A, 5Ω
Description
General part information
NDC7003P
These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using ON Semiconductor’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
Technical Specifications
Parameters and characteristics for this part
| Specification | NDC7003P |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 340 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 2.2 nC |
| Input Capacitance (Ciss) (Max) | 66 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | SuperSOT™-6 |
| Power - Max | 700 mW |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3.5 V |
Pricing
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