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ONSEMI FDS6679AZ

FDS6679AZ

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 13 A, 0.0077 OHM, SOIC, SURFACE MOUNT

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ONSEMI FDS6679AZ

FDS6679AZ

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 13 A, 0.0077 OHM, SOIC, SURFACE MOUNT

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Description

General part information

FDS6679AZ

This P-Channel MOSFET is producted using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS6679AZ
Current - Continuous Drain (Id) (Ta)13 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)96 nC
Input Capacitance (Ciss) (Max)3845 pF
Mounting TypeSurface Mount
Operating Temperature (Max)155 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max)9.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part