S25FL127SABMFB100 is a FL-S flash non-volatile memory using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65-nm process lithography. This multiple width interface is called SPI multi-I/O or MIO. The Eclipse architecture features a page programming buffer that allows up to 128 words (256bytes) or 256 words (512bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called eXecute-in-Place (XIP). It t offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.