
TSM5055DCR
ActiveTaiwan Semiconductor Corporation
MOSFET 2N-CH 30V 10A 8PDFN

TSM5055DCR
ActiveTaiwan Semiconductor Corporation
MOSFET 2N-CH 30V 10A 8PDFN
Description
General part information
TSM5055DCR
MOSFET 2N-CH 30V 10A 8PDFN
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM5055DCR |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel, Asymmetrical |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Current - Continuous Drain (Id) (Ta) (2) | 20 A |
| Current - Continuous Drain (Id) (Tc) | 38 A |
| Current - Continuous Drain (Id) (Tc) (2) | 107 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Max) | 9.3 nC, 49 nC, 9.3 nC |
| Input Capacitance (Ciss) (Max) | 2550 pF, 555 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-PDFN |
| Package Width | 6 mm |
| Power - Max (Ta) | 2.2 W, 2.4 W |
| Power - Max (Tc) | 30 W, 69 W |
| Rds On (Max) | 11.7 mOhm, 3.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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