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Description

General part information

TK9R7A15Q5,S4X

150V UMOS10-HSD TO-220SIS 9.7MOH

Technical Specifications

Parameters and characteristics for this part

SpecificationTK9R7A15Q5,S4X
Current - Continuous Drain (Id) (Tc)49 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)50 nC
Input Capacitance (Ciss) (Max)3690 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)45 W
Rds On (Max)9.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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Documents

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    TK9R7A15Q5,S4X | Toshiba Semiconductor and Storage | Zenode.ai