Description
General part information
IAUC26N10S5L245ATMA1
The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in engine management, wireless charging as well as LED lighting.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUC26N10S5L245ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 26 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 762 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-33 |
| Power Dissipation (Max) | 40 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 24.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources