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IRF430

IRF430

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INFINEON

INFINEON’S DEFENSE PORTFOLIO INCLUDES HIGH RELIABILITY MEMORIES, POWER MANAGEMENT AND POWER CONVERSION SOLUTIONS FOR EXTREME OPERATING ENVIRONMENTS.

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IRF430

IRF430

Active
INFINEON

INFINEON’S DEFENSE PORTFOLIO INCLUDES HIGH RELIABILITY MEMORIES, POWER MANAGEMENT AND POWER CONVERSION SOLUTIONS FOR EXTREME OPERATING ENVIRONMENTS.

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Description

General part information

IRF430

500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF430 with Hermetic Packaging Benefits

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF430
Current - Continuous Drain (Id) (Tc)4.5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Input Capacitance (Ciss) (Max)610 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-3, TO-204AA
Package NameTO-204AA (TO-3)
Power Dissipation (Max)75 W
Rds On (Max)1.8 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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