FCX589TA

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 30V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 30V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	FCX589TA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	SOT-89-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PNP, 30V, 1A, SOT89

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Mounting Type	Package / Case	Transistor Type	Current - Collector (Ic) (Max) [Max]
Diodes Inc FCX589TA	650 mV	100	150 °C	-65 °C	30 V	100 nA	SOT-89-3	1 W	100 MHz	Surface Mount	TO-243AA	PNP	1 A

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General part information

PNP, 30V, 1A, SOT89

Technical documentation and resources